inchange semiconductor product specification silicon npn power transistors 2SD1060 description ? with to-220 package ? low collector saturation voltage ? complement to type 2sb824 applications ? suitable for relay drivers,high-speed inverters,converters,and other general large-current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a i cp collector current (pulse) 9 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1060 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;r be = ?t 50 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 60 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 0.4 v i cbo collector cut-off current v cb =40v;i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =2v 70 280 h fe-2 dc current gain i c =3a ; v ce =2v 30 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 100 pf f t transition frequency i c =1a ; v ce =-5v 30 mhz switching times t on turn-on time 0.1 | s t s storage time 1.4 | s t f fall time i c =2.0a; i b1 = i b2 =0.2a 0.2 | s ? h fe-1 classifications q r s 70-140 100-200 140-280
inchange semiconductor product specification 3 silicon npn power transistors 2SD1060 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SD1060
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